detailed description:

The thin film thermal stress measurement system (kSA MOS Thermal Scan thin film thermal stress meter, thin film stress meter, thin film stress tester) and the measurement optical design MOS sensor have won a US patent! At the same time, KSA company was awarded the 2008 Innovation of the Year Award!
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This device has been widely used by renowned universities around the world, such as Harvard University (2 sets), Stanford University, Johns Hopkins University, and Brown University (2 sets), Karlsruhe Research Center,Max Planck Institute， Xi'an Jiaotong University, Chinese Academy of Metrology, Institute of Microsystems, Chinese Academy of Sciences, Shanghai Institute of Optics and Fine Mechanics, etc.), semiconductor and microelectronics manufacturers (such as IBM.，Seagate Research Center,Phillips Semiconductor,NEC，Nissan ARC,Nichia Glass Corporation） Waiting for adoption;

Similar devices:
Thin film stress tester (kSA MOS thin film stress measurement system, thin film stress meter);
Thin film residual stress tester;
Real time in-situ thin film stress analyzer (kSA MOS);

Technical parameters:
kSA MOS Thermal-Scan Film Stress Tester, kSA MOS Film Stress Measurement System，kSA MOS Film Stress Mapping System;
1. Variable temperature design: using vacuum and low-pressure gas protection, temperature range RT~1000 ° C;
2. Curvature resolution: 100km;
3. XY bidirectional program controlled scanning platform scanning range: up to 300mm (optional);
4. XY bidirectional scanning speed: maximum 20mm/s;
5. XY bidirectional scanning platform scanning minimum step/resolution: 2 μ m;
6.sampleholderCompatibility:50mm, 75mm, 100mm, 150mm, 200mm, and 300mmDiameter sample;
7.Programmable control scanning modes: selected area, multi-point linear scanning, full area scanning;
8.Imaging function: Sample surface2DCurvature, stress imaging, and3DImaging analysis;
9.Measurement functions: curvature, curvature radius, stress intensity, stressBowAnd warping, etc;
10. Temperature uniformity: better than ± 2 degrees Celsius;

Main features:
1. Patent technology: MOS multi beam technology (two-dimensional laser array);
2. Variable temperature design: using vacuum and low-pressure gas protection, temperature range RT~1000 ° C;
3. Sample rapid heat treatment function;
4. Sample rapid cooling processing function;
5. Temperature closed-loop control function ensures excellent temperature uniformity and accuracy;
6. Real time stress vs. temperature curve;
7. Real time curvature vs. temperature curve;
8. Programmed control scanning mode: selected area, multi-point linear scanning, full area scanning;
9. Imaging function: 2D curvature imaging of sample surface, quantitative thin film stress imaging analysis;
10. Measurement functions: curvature, curvature radius, film stress, film stress distribution, and warping, etc;
11. Gas (nitrogen, argon, oxygen, etc.) delivery system;

Practical application: